Physical properties of KMgBi single crystals

Xiao Zhang; Shanshan Sun; Hechang Lei

doi:10.1103/PhysRevB.95.035209

Physical properties of KMgBi single crystals

Materials Science 2017-02-01 v2

Authors: Xiao Zhang , Shanshan Sun , Hechang Lei

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Abstract

KMgBi single crystals are grown by using the Bi flux successfully. KMgBi shows semiconducting behavior with a metal-semiconductor transition at high temperature region and a resistivity plateau at low temperature region, suggesting KMgBi could be a topological insulator with a very small band gap. Moreover, KMgBi exhibits multiband feature with strong temperature dependence of carrier concentrations and mobilities.

Keywords

KMgBi single crystals topological insulator semiconducting behavior metal-semiconductor transition multiband feature carrier concentration mobility

Cite

@article{arxiv.1610.02699,
  title  = {Physical properties of KMgBi single crystals},
  author = {Xiao Zhang and Shanshan Sun and Hechang Lei},
  journal= {arXiv preprint arXiv:1610.02699},
  year   = {2017}
}

Comments

6 pages, 5 figures

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