Photon-mediated entanglement scheme between a ZnO semiconductor defect and a trapped Yb ion
Abstract
We propose an optical scheme to generate an entangled state between a trapped ion and a solid state donor qubit through which-path erasure of identical photons emitted from the two systems. The proposed scheme leverages the similar transition frequencies between In donor bound excitons in ZnO and the to transition in Yb. The lifetime of the relevant ionic state is longer than that of the ZnO system by a factor of 6, leading to a mismatch in the temporal profiles of emitted photons. A detuned cavity-assisted Raman scheme weakly excites the donor with a shaped laser pulse to generate photons with 0.99 temporal overlap to the Yb emission and partially shift the emission of the defect toward the Yb transition. The remaining photon shift is accomplished via the dc Stark effect. We show that an entanglement rate of 21 kHz and entanglement fidelity of 94 % can be attained using a weak excitation scheme with reasonable parameters.
Keywords
Cite
@article{arxiv.2006.14728,
title = {Photon-mediated entanglement scheme between a ZnO semiconductor defect and a trapped Yb ion},
author = {Jennifer F. Lilieholm and Vasilis Niaouris and Alexander Kato and Kai-Mei C. Fu and Boris B. Blinov},
journal= {arXiv preprint arXiv:2006.14728},
year = {2020}
}