We develop a theoretic description of the photogalvanic current induced by a high frequency radiation in asymmetric nanostructures and show that it describes well the results of numerical simulations. Our studies allow to understand the origin of the electronic ratchet transport in such systems and show that they can be used for creation of new types of detectors operating at room temperature in a terahertz radiation range.
@article{arxiv.cond-mat/0701128,
title = {Photogalvanic current in artificial asymmetric nanostructures},
author = {A. D. Chepelianskii and M. V. Entin and L. I. Magarill and D. L. Shepelyansky},
journal= {arXiv preprint arXiv:cond-mat/0701128},
year = {2007}
}