English

Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates

Superconductivity 2017-08-23 v1

Abstract

The discovery of an enhanced superconducting transition temperature TcT_c in monolayers of FeSe grown on several oxide substrates has opened a new route to high-TcT_c superconductivity through interface engineering. One proposal for the origin of the observed enhancement is an electron-phonon (e-ph) interaction across the interface that peaked at small momentum transfers. In this paper, we examine the implications of such a coupling on the phononic properties of the system. We show that a strong forward scattering leads to a sizable broadening of phonon lineshape, which may result in charge instabilities at long-wavelengths. However, we further find that the inclusion of Coulombic screening significantly reduces the phonon broadening. Our results show that one might not expect anomalously broad phonon linewidths in the FeSe interface systems, despite the fact that the e-ph interaction has a strong peak in the forward scattering (small qq) direction.

Keywords

Cite

@article{arxiv.1703.02013,
  title  = {Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates},
  author = {Yan Wang and Louk Rademaker and Elbio Dagotto and Steven Johnston},
  journal= {arXiv preprint arXiv:1703.02013},
  year   = {2017}
}

Comments

8 pages, 4 figures