We show the results of two-terminal and four-terminal transport measurements on few-layer NbSe2 devices at large current bias. In all the samples measured, transport characteristics at high bias are dominated by a series of resistance jumps due to nucleation of phase slip lines, the two dimensional analogue of phase slip centers. In point contact devices the relatively simple and homogeneous geometry enables a quantitative comparison with the model of Skocpol, Beasley and Tinkham. In extended crystals the nucleation of a single phase slip line can be induced by mechanical stress of a region whose width is comparable to the charge imbalance equilibration length.
@article{arxiv.1811.06207,
title = {Phase slip lines in superconducting few-layer NbSe$_2$ crystals},
author = {Nicola Paradiso and Anh-Tuan Nguyen and Karl Enzo Kloss and Christoph Strunk},
journal= {arXiv preprint arXiv:1811.06207},
year = {2019}
}