A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional non-parabolic carrier-pocket. Based on this model, the symmetries and the band-shifts of different carrier-pockets are evaluated for BiSb thin films that are grown along different crystalline axes. The phase diagrams for the BiSb thin film systems with different growth orientations are calculated and analyzed.
@article{arxiv.1203.2637,
title = {Phase Diagrams of Bi1-xSbx Thin Films with Different Growth Orientations},
author = {Shuang Tang and Mildred S. Dresselhaus},
journal= {arXiv preprint arXiv:1203.2637},
year = {2015}
}