Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

M. Lesik; J. -P. Tetienne; A. Tallaire; J. Achard; V. Mille; A. Gicquel; J. -F. Roch; V. Jacques

doi:10.1063/1.4869103

Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

Materials Science 2015-06-18 v2

Authors: M. Lesik , J. -P. Tetienne , A. Tallaire , J. Achard , V. Mille , A. Gicquel , J. -F. Roch , V. Jacques

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Abstract

We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition (CVD) growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ~ 97 % probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications.

Keywords

nitrogen-vacancy defects synthetic diamond chemical vapor deposition preferential orientation quantum sensing

Cite

@article{arxiv.1401.2795,
  title  = {Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample},
  author = {M. Lesik and J. -P. Tetienne and A. Tallaire and J. Achard and V. Mille and A. Gicquel and J. -F. Roch and V. Jacques},
  journal= {arXiv preprint arXiv:1401.2795},
  year   = {2015}
}

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6 pages, 4 figures

Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

Abstract

Keywords

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