Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO3/SrTiO3 (a-LAO/STO) and modulation-doped amorphous- LaAlO3/La7/8Sr1/8MnO3/SrTiO3 (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching of amorphous-LSM (a-LSM) thin films which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ~8,700 cm2/Vs at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually are ~1,000 cm2/Vs at 2 K.
@article{arxiv.1601.05571,
title = {Patterning of high mobility electron gases at complex oxide interfaces},
author = {Felix Trier and Guenevere E. D. K. Prawiroatmodjo and Merlin von Soosten and Dennis Valbjørn Christensen and Thomas Sand Jespersen and Yunzhong Chen and Nini Pryds},
journal= {arXiv preprint arXiv:1601.05571},
year = {2016}
}