We investigate, as part of a Lawrence-Livermore-National-Laboratory (LLNL) sponsored-research work initiated in February of 2021, the parametric performance analysis of ultra-wide bandgap (UWBG) Fe-doped Ga2O3 photoconductive semiconductor switch (FG-PCSS) with embedded electrode. The detailed SILVACO based simulation of the FG-PCSS uses experimentally obtained lifetime, absorption coefficient, and mobility data. The key analysis results, demonstrated first to the sponsor LLNL in 2022, focus on the performance of the FG-PCSS under relatively high electric field and optical-excitation energy with specific regard to current gain, quantum efficiency, on-state resistance, and impact of beam position. The parametric analysis indicates that a high-gain operation yielding a low-cost laser beam for the FG-PCSS is possible.
@article{arxiv.2508.04911,
title = {Parametric Analysis of First High-Gain Vertical Fe-doped Ultrafast Ga2O3 Photoconductive Semiconductor Switch},
author = {N. Karpourazar and S. K. Mazumder and V. Jangir and K. M. Dowling and J. Leach and L. Voss},
journal= {arXiv preprint arXiv:2508.04911},
year = {2025}
}