Para-ortho transition of artificial H$_2$ molecule in lateral quantum dots doped with magnetic impurities
Mesoscale and Nanoscale Physics
2015-05-13 v2 Materials Science
Abstract
We present the magnetic phase diagram of artificial H molecule in lateral quantum dots doped with magnetic impurities as a function of external magnetic field and plunger gate voltage. The onset of Mn-Mn antiferromagnetic-ferromagnetic transition follows the electron spin singlet-triplet transition. We deploy a configuration-interaction method to exactly diagonalize the electron-Mn Hamiltonian and map it to an effective Mn-Mn Heisenberg Hamiltonian. We find that Mn-Mn exchange coupling can be described by RKKY-interaction/magnetic-polaron in weak/strong electron-Mn coupling at low/high magnetic fields.
Keywords
Cite
@article{arxiv.0907.4726,
title = {Para-ortho transition of artificial H$_2$ molecule in lateral quantum dots doped with magnetic impurities},
author = {Ramin M. Abolfath},
journal= {arXiv preprint arXiv:0907.4726},
year = {2015}
}
Comments
5 pages, 3 figures