A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method to induce a flat band in two-dimensional (2D) materials. We show that the flat band can be achieved by sandwiching the 2D material by two cesium (Cs) layers. We apply this method to monolayer graphene and investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculation. Our work highlights that charge transfer, zone folding of graphene bands and the covalent bonding between C and Cs atoms are at the origin of the flat energy band formation. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas.
@article{arxiv.1903.09038,
title = {Origin of the flat band in heavily Cs doped graphene},
author = {N. Ehlen and M. Hell and G. Marini and E. H. Hasdeo and R. Saito and G. Di Santo and L. Petaccia and G. Profeta and A. Grüneis},
journal= {arXiv preprint arXiv:1903.09038},
year = {2019}
}