Orientation-dependent stability and quantum-confinement effects of silicon carbide nanowires
Abstract
The energetic stability and electronic properties of hydrogenated silicon carbide nanowires (SiCNWs) with zinc blende (3C) and wurtzite (2H) structures are investigated using first-principles calculations within density functional theory and generalized gradient approximation. The [111]-orientated 3C-SiCNWs are energetically more stable than other kinds of NWs with similar size. All the NWs have direct band gaps except the 3C-SiCNWs orientating along [112] direction. The band gaps of these NWs decrease with the increase of wire size, due to the quantum-confinement effects. The direct-band-gap features can be kept for the 3C-SiCNWs orientating along [111] direction with diameters up to 2.8 nm. The superior stability and electronic structures of the [111]-orientated 3C-SiCNWs are in good agreement with the experimental results.
Keywords
Cite
@article{arxiv.0904.2421,
title = {Orientation-dependent stability and quantum-confinement effects of silicon carbide nanowires},
author = {Zhenhai Wang and Mingwen Zhao and Tao He and Hongyu Zhang and Xuejuan Zhang and Zexiao Xi and Shishen Yan and Xiangdong Liu and Yueyuan Xia},
journal= {arXiv preprint arXiv:0904.2421},
year = {2015}
}
Comments
9 pages, 5 figures