We investigate the orbital-to-charge current conversion in CoFeB|CuO bilayers as a function of CuO thickness, employing orbital pumping via ferromagnetic resonance. The dynamic injection of orbital angular momentum into the CuO layer generates a transverse voltage through the Inverse Orbital Hall Effect (IOHE). By systematically varying the CuO thickness from 2 nm to 30 nm, we observe a pronounced dependence of the IOHE-induced voltage on the CuO layer thickness, indicating efficient orbital-to-charge conversion. These results highlight the key role of the orbital degree of freedom in orbitronics and provide insights into the potential of transition-metal oxides for next-generation orbitronic devices.
Cite
@article{arxiv.2603.02340,
title = {Orbital to charge current conversion in copper oxide heterostructures},
author = {S. Vojkovic and K. Cancino and G. Rodríguez and E. Burgos and G. Herrera and C. Gonzalez-Fuentes and J. Palma and T. V. M. Sreekanth and J. Denardin and R. L. Rodríguez-Suárez and S. Oyarzún},
journal= {arXiv preprint arXiv:2603.02340},
year = {2026}
}