Optoelectronic mixing with high frequency graphene transistors

Alberto Montanaro; Wei Wei; Domenico De Fazio; Ugo Sassi; Giancarlo Soavi; Andrea C Ferrari; Henri Happy; Pierre Legagneux; Emiliano Pallecchi

Optoelectronic mixing with high frequency graphene transistors

Applied Physics 2019-05-27 v1

Authors: Alberto Montanaro , Wei Wei , Domenico De Fazio , Ugo Sassi , Giancarlo Soavi , Andrea C Ferrari , Henri Happy , Pierre Legagneux , Emiliano Pallecchi

View on arXiv ↗ PDF ↗

Abstract

Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave applications, such as telecommunications and RADAR/LIDAR systems.

Keywords

graphene plasmonics graphene field-effect transistors

Cite

@article{arxiv.1905.09967,
  title  = {Optoelectronic mixing with high frequency graphene transistors},
  author = {Alberto Montanaro and Wei Wei and Domenico De Fazio and Ugo Sassi and Giancarlo Soavi and Andrea C Ferrari and Henri Happy and Pierre Legagneux and Emiliano Pallecchi},
  journal= {arXiv preprint arXiv:1905.09967},
  year   = {2019}
}

Optoelectronic mixing with high frequency graphene transistors

Abstract

Keywords

Cite

Related papers