This work demonstrates the viability of scandium oxide deposition on silicon by means of high pressure sputtering. Deposition pressure and radio frequency power are varied for optimization of the properties of the thin films and the ScOx-Si interface. The physical characterization was performed by ellipsometry, Fourier transform infrared spectroscopy, x-ray diffraction and transmission electron microscopy. Aluminum gate electrodes were evaporated for metal-insulator-semiconductor (MIS) fabrication. From the electrical characterization of the MIS devices, the density of interfacial defects is found to decrease with deposition pressure, showing a reduced plasma damage of the substrate surface for higher pressures. This is also supported by lower flatband voltage shifts in the capacitance versus voltage hysteresis curves. Sputtering at high pressures (above 100 Pa) reduces the interfacial SiOx formation, according to the infrared spectra. The growth rates decrease with deposition pressure, so a very accurate control of the layer thicknesses could be provided.
@article{arxiv.2401.16489,
title = {Optimization of scandium oxide growth by high pressure sputtering on silicon},
author = {Pedro Carlos Feijoo and María Ángela Pampillón and Enrique San Andrés and María Luisa Lucía},
journal= {arXiv preprint arXiv:2401.16489},
year = {2024}
}