Optically Active Single Hole Spin in ZnSe
Abstract
Semiconductor hole spins offer a pathway to extended coherence times by decoupling from nuclear magnetic noise, while their spin-orbit coupling enables fast all-electrical control. In ZnSe, however, realizing this potential has been limited by p-doping challenges. Here, we circumvent this limit by optically activating acceptors within the ZnSe quantum well. We isolate a single-hole spin bound to a shallow acceptor, confirmed by antibunching and accessed via the fast (244 ps) radiative recombination of a bound exciton. Magnetic and Raman spectroscopy of the ground state reveal an effective hole g-factor of 0.7 and an optical resonance linewidth of 26.7 GHz. Complementary first-principles simulations, together with the experimental results, provide evidence that points toward nitrogen as the most likely acceptor impurity. These results introduce a promising new platform for optically active spin qubits and single-photon sources in ZnSe.
Cite
@article{arxiv.2607.00110,
title = {Optically Active Single Hole Spin in ZnSe},
author = {Amirehsan Alizadehherfati and Yuxi Jiang and Kelsey J. Mirrielees and Nils von den Driesch and Christine Falter and Yurii Kutovyi and Amirehsan Boreiri and Douglas L. Irving and Alexander Pawlis and Edo Waks},
journal= {arXiv preprint arXiv:2607.00110},
year = {2026}
}