We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin-polarization efficiencies and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct-gap photoluminescence exceeds the theoretical bulk limit, yielding ~37% and ~85% for transitions with heavy and light holes states, respectively. The spin lifetime of holes at the top of the valence band is found to be ~0.5 ps and it is governed by transitions between heavy and light hole states. Electrons at the bottom of the conduction band, on the other hand, have a spin lifetime that exceeds 5 ns below 150 K. Theoretical analysis of the electrons spin relaxation indicates that phonon-induced intervalley scattering dictates the spin lifetime.
Cite
@article{arxiv.1111.5209,
title = {Optical spin injection and spin lifetime in Ge heterostructures},
author = {F. Pezzoli and F. Bottegoni and D. Trivedi and F. Ciccacci and A. Giorgioni and P. Li and S. Cecchi and E. Grilli and Y. Song and M. Guzzi and H. Dery and G. Isella},
journal= {arXiv preprint arXiv:1111.5209},
year = {2012}
}