Neuromorphic computing has emphasized the need for memristors with non-volatile, multiple conductance levels. This paper demonstrates the potential of hexagonal boron nitride (hBN)/graphene heterostructures to act as memristors with multiple resistance states that can be optically tuned using visible light. The number of resistance levels in graphene can be controlled by modulating doping levels, achieved by varying the electric field strength or adjusting the duration of optical illumination. Our measurements show that this photodoping of graphene results from the optical excitation of charge carriers from the nitrogen-vacancy levels of hBN to its conduction band, with these carriers then being transferred to graphene by the gate-induced electric field. We develop a quantitative model to describe our observations. Additionally, utilizing our device architecture, we propose a memristive crossbar array for vector-matrix multiplications.
@article{arxiv.2407.13387,
title = {Optical control of multiple resistance levels in graphene for memristic applications},
author = {Harsimran Kaur Mann and Mainak Mondal and Vivek Sah and Kenji Watanabe and Takashi Taniguchi and Akshay Singh and Aveek Bid},
journal= {arXiv preprint arXiv:2407.13387},
year = {2024}
}