Optical bistability in a GaAs based polariton diode
Other Condensed Matter
2008-12-27 v1
Abstract
We report on a new type of optical nonlinearity in a polariton p-i-n microcavity. Abrupt switching between the strong and weak coupling regime is induced by controlling the electric field within the cavity. As a consequence bistable cycles are observed for low optical powers (2-3 orders of magnitude less than for Kerr induced bistability). Signatures of switching fronts propagating through the whole 300 microns x 300 microns mesa surface are evidenced.
Cite
@article{arxiv.0809.4758,
title = {Optical bistability in a GaAs based polariton diode},
author = {Daniele Bajoni. Elizaveta Semenova and Aristide Lemaître and Sophie Bouchoule and Esther Wertz and Pascale Senellart and Sylvain Barbay and Robert Kuszelewicz and Jacqueline Bloch},
journal= {arXiv preprint arXiv:0809.4758},
year = {2008}
}
Comments
5 pages 3 figures