Open-Circuit Voltage Deficit in Cu2ZnSnS4 Solar Cells by Interface Band Gap Narrowing

Ji-Sang Park; Sunghyun Kim; Samantha N. Hood; Aron Walsh

doi:10.1063/1.5063793

Open-Circuit Voltage Deficit in Cu2ZnSnS4 Solar Cells by Interface Band Gap Narrowing

Materials Science 2019-01-23 v2

Authors: Ji-Sang Park , Sunghyun Kim , Samantha N. Hood , Aron Walsh

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

There is evidence that interface recombination in Cu2ZnSnS4 solar cells contributes to the open-circuit voltage deficit. Our hybrid density functional theory calculations suggest that electron-hole recombination at the Cu2ZnSnS4/CdS interface is caused by a deeper conduction band that slows electron extraction. In contrast, the bandgap is not narrowed for the Cu2ZnSnSe4/CdS interface, consistent with a lower open-circuit voltage deficit.

Keywords

Cu2ZnSnS4 solar cells open-circuit voltage deficit interface recombination band gap narrowing density functional theory Cu2ZnSnSe4

Cite

@article{arxiv.1811.01867,
  title  = {Open-Circuit Voltage Deficit in Cu2ZnSnS4 Solar Cells by Interface Band Gap Narrowing},
  author = {Ji-Sang Park and Sunghyun Kim and Samantha N. Hood and Aron Walsh},
  journal= {arXiv preprint arXiv:1811.01867},
  year   = {2019}
}

Comments

5 pages, 5 figures

Related papers

View all related →

Mesoscale and Nanoscale Physics · Physics

Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells

Andrea Crovetto, Mattias Palsgaard, Tue Gunst, Troels Markussen +3

2017-04-05

Applied Physics · Physics

Origin of interface limitation in CuInS$_2$ based solar cells

Mohit Sood, Jakob Bombsch, Alberto Lomuscio, Sudhanshu Shukla +8