On the possibility of level broadening in a quantum dot due to electrostatic interaction with a gate electrode
Other Condensed Matter
2007-05-23 v2
Abstract
In this article, we consider a quantum dot system which is interacting with a spatially separated metallic gate electrode via direct Coulomb interaction. Here, the gate electrode is described by an idealized two-dimensional electron gas. Due to Coulomb scattering effects, the latter may introduce level broadening to the quantum dot system.
Keywords
Cite
@article{arxiv.cond-mat/0610806,
title = {On the possibility of level broadening in a quantum dot due to electrostatic interaction with a gate electrode},
author = {K. M. Indlekofer},
journal= {arXiv preprint arXiv:cond-mat/0610806},
year = {2007}
}