English

On the Origin of the -4.4 eV Band in CdTe(100)"

Condensed Matter 2009-10-22 v1

Abstract

We calculate the bulk- (infinite system), (100)-bulk-projected- and (100)-Surface-projected Green's functions using the Surface Green's Function Matching method (SGFM) and an empirical tight-binding hamiltonian with tight-binding parameters (TBP) that describe well the bulk band structure of CdTe. In particular, we analyze the band (B--4) arising at --4.4 eV from the top of the valence band at Γ\Gamma according to the results of Niles and H\"ochst and at -4.6 eV according to Gawlik {\it et al.} both obtained by Angle-resolved photoelectron spectroscopy (ARPES). We give the first theoretical description of this band.

Keywords

Cite

@article{arxiv.cond-mat/9403062,
  title  = {On the Origin of the -4.4 eV Band in CdTe(100)"},
  author = {D. Olguin and R. Baquero},
  journal= {arXiv preprint arXiv:cond-mat/9403062},
  year   = {2009}
}

Comments

17 pages, Rev-TEX, CIEA-Phys. 02/94