On the Origin of the -4.4 eV Band in CdTe(100)"
Condensed Matter
2009-10-22 v1
Abstract
We calculate the bulk- (infinite system), (100)-bulk-projected- and (100)-Surface-projected Green's functions using the Surface Green's Function Matching method (SGFM) and an empirical tight-binding hamiltonian with tight-binding parameters (TBP) that describe well the bulk band structure of CdTe. In particular, we analyze the band (B--4) arising at --4.4 eV from the top of the valence band at according to the results of Niles and H\"ochst and at -4.6 eV according to Gawlik {\it et al.} both obtained by Angle-resolved photoelectron spectroscopy (ARPES). We give the first theoretical description of this band.
Keywords
Cite
@article{arxiv.cond-mat/9403062,
title = {On the Origin of the -4.4 eV Band in CdTe(100)"},
author = {D. Olguin and R. Baquero},
journal= {arXiv preprint arXiv:cond-mat/9403062},
year = {2009}
}
Comments
17 pages, Rev-TEX, CIEA-Phys. 02/94