On the Nature of Localization in Ti doped Si
Disordered Systems and Neural Networks
2018-11-13 v2 Strongly Correlated Electrons
Abstract
Intermediate band semiconductors hold the promise to significantly improve the efficiency of solar cells, but only if the intermediate impurity band is metallic. We apply a recently developed first principles method to investigate the origin of electron localization in Ti doped Si, a promising candidate for intermediate band solar cells. Although Anderson localization is often overlooked in the context of intermediate band solar cells, our results show that in Ti doped Si it plays a more important role in the metal insulator transition than Mott localization. Implications for the theory of intermediate band solar cells are discussed.
Keywords
Cite
@article{arxiv.1805.05276,
title = {On the Nature of Localization in Ti doped Si},
author = {Yi Zhang and R. Nelson and K. -M. Tam and W. Ku and U. Yu and N. S. Vidhyadhiraja and H. Terletska and J. Moreno and M. Jarrell and T. Berlijn},
journal= {arXiv preprint arXiv:1805.05276},
year = {2018}
}
Comments
5 pages, 3 figures for the main text. 8 pages, 11 figures for the supplementary material