English

On Effective Electron Mass of Silicon MOSFET at Low Electron Density

Mesoscale and Nanoscale Physics 2009-11-07 v1

Abstract

The trial wave function method developed in Ref.s \cite{gutz,brink} for the case of narrow {\it s}-band in a perfect crystal is adapted for calculation of the density dependence of the effective mass and the Lande factor in a dilute two-dimensional electron system. We find that the effective mass has a tendency to diverge at a certain critical concentration, whereas the gg factor remains finite.

Keywords

Cite

@article{arxiv.cond-mat/0211482,
  title  = {On Effective Electron Mass of Silicon MOSFET at Low Electron Density},
  author = {V. T. Dolgopolov},
  journal= {arXiv preprint arXiv:cond-mat/0211482},
  year   = {2009}
}

Comments

5 pages, 2 figures. Published in JETP Letters