English

Odd-Integer Quantum Hall Effect in Graphene: Interaction and Disorder Effects

Mesoscale and Nanoscale Physics 2009-11-13 v2

Abstract

We study the competition between the long-range Coulomb interaction, disorder scattering, and lattice effects in the integer quantum Hall effect (IQHE) in graphene. By direct transport calculations, both ν=1\nu=1 and ν=3\nu=3 IQHE states are revealed in the lowest two Dirac Landau levels. However, the critical disorder strength above which the ν=3\nu=3 IQHE is destroyed is much smaller than that for the ν=1\nu=1 IQHE, which may explain the absence of a ν=3\nu=3 plateau in recent experiments. While the excitation spectrum in the IQHE phase is gapless within numerical finite-size analysis, we do find and determine a mobility gap, which characterizes the energy scale of the stability of the IQHE. Furthermore, we demonstrate that the ν=1\nu=1 IQHE state is a Dirac valley and sublattice polarized Ising pseudospin ferromagnet, while the ν=3\nu=3 state is an xyxy plane polarized pseudospin ferromagnet.

Keywords

Cite

@article{arxiv.0706.0371,
  title  = {Odd-Integer Quantum Hall Effect in Graphene: Interaction and Disorder Effects},
  author = {L. Sheng and D. N. Sheng and F. D. M. Haldane and Leon Balents},
  journal= {arXiv preprint arXiv:0706.0371},
  year   = {2009}
}
R2 v1 2026-06-21T08:34:44.926Z