It is known in the literature that InGaP alloy synthesized within a certain range of growth temperature (520 - 720 degree Centrigrade) shows Cu-Pt crystal ordering. This ordering reduces the band gap energy . It was predicted that the ordering induced modification of energy levels of InGaP lowers its conduction band edge, which could change a type I band alignment at a GaAs/InGaP heterojunction to type II . Here we report the first observation of this ordering related type I/II transition for a GaAs/InGaP heterojunction by C-V profiling experiments done at room temperature .
@article{arxiv.cond-mat/9903116,
title = {Observation of Type I/II Transition in GaAs/InGaP Heterostructure by C-V Profiling},
author = {Shouvik Datta and M. R. Gokhle and A. P. Shah and T. K. Sharma and B. M. Arora},
journal= {arXiv preprint arXiv:cond-mat/9903116},
year = {2009}
}
Comments
2 pages, 3 figures . Submitted to 41st Electronic Materials Conference, (June-July)1999, University of California, Santa Barbara, California