We performed an angle-resolved photoemission spectroscopy study of Si-doped β-Ga2O3. We observed very small photoemission intensity near the Fermi level corresponding to non-dispersive states assigned to Si impurities. We show evidence for a quantization of these states that is accompanied by a confinement in the momentum space consistent with a real-space finite confinement observed in a previous scanning tunneling microscopy study. Our results suggest that this semi-localization in the conjugate spaces plays a crucial role in the electronic conduction of this material.
@article{arxiv.1211.3220,
title = {Observation of momentum space semi-localization in Si-doped $\beta$-Ga$_2$O$_3$},
author = {P. Richard and T. Sato and S. Souma and N. Nakayama and H. W. Liu and K. Iwaya and T. Hitosugi and H. Aida and H. Ding and T. Takahashi},
journal= {arXiv preprint arXiv:1211.3220},
year = {2012}
}
Comments
4 pages, 4 figures. Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://apl.aip.org/resource/1/applab/v101/i23/p232105_s1