Stubbed waveguides and stub transistors are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized carriers. In this paper, we present the simulation of the conductance of the stub transistor (single and double-gated), modeled with a nearest-neighbor tight-binding Hamiltonian. The oscillatory behavior of the channel conductance with the applied stub voltage is observed.
@article{arxiv.cond-mat/0304201,
title = {Numerical Analysis of the Stub Transistor},
author = {Alexandre B. Guerra and Edval J. P. Santos},
journal= {arXiv preprint arXiv:cond-mat/0304201},
year = {2007}
}