Novel Pressure Induced Structural Phase Transition in AgSbTe$_{2}$

Ravhi S. Kumar; Andrew L. Cornelius; Eunja Kim; Yongrong Shen; S. Yoneda; Chenfeng Chen; Malcolm F. Nicol

doi:10.1103/PhysRevB.72.060101

Novel Pressure Induced Structural Phase Transition in AgSbTe$_{2}$

Materials Science 2009-11-10 v1

Authors: Ravhi S. Kumar , Andrew L. Cornelius , Eunja Kim , Yongrong Shen , S. Yoneda , Chenfeng Chen , Malcolm F. Nicol

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Abstract

We report a novel high pressure structural sequence for the functionally graded thermoelectric, narrow band gap semiconductor AgSbTe $_{2}$ , using angle dispersive x-ray diffraction in a diamond anvil cell with synchrotron radiation at room temperature. The compound undergoes a B1 to B2 transition; the transition proceeds through an intermediate amorphous phase found between 17-26 GPa that is quenchable down to ambient conditions. The pressure induced structural transition observed in this compound is the first of its type reported in this ternary cubic family, and it is new for the B1-B2 transition pathway reported to date. Density Functional Theory (DFT) calculations performed for the B1 and B2 phases are in good agreement with the experimental results.

Keywords

high-pressure phase transitions electronic structure of materials phase transitions

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@article{arxiv.cond-mat/0412347,
  title  = {Novel Pressure Induced Structural Phase Transition in AgSbTe$_{2}$},
  author = {Ravhi S. Kumar and Andrew L. Cornelius and Eunja Kim and Yongrong Shen and S. Yoneda and Chenfeng Chen and Malcolm F. Nicol},
  journal= {arXiv preprint arXiv:cond-mat/0412347},
  year   = {2009}
}

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4 pages, 3 figures

Novel Pressure Induced Structural Phase Transition in AgSbTe$_{2}$

Abstract

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