Nonlinear Transfer of Intense Few Cycle Terahertz Pulse Through Opaque n-doped Si
Optics
2018-10-31 v1
Abstract
Intense few cycle terahertz pulses exhibit complex non-linear behavior under interaction with heavily n-doped Si. Fast increase in the transmission of a 700 fs pulse (central frequency 1.5 THz) through the Si sample (low field transmission of 0:02 %) saturates at 8 % for the external field of 5 MV/cm and then drops twofold at 20 MV/cm. An electro-optical sampling measurements revealed formation of a single cycle terahertz pulse at this field due to formation of a thin ionized layer by the first intense oscillation of the terahertz field.
Keywords
Cite
@article{arxiv.1805.09611,
title = {Nonlinear Transfer of Intense Few Cycle Terahertz Pulse Through Opaque n-doped Si},
author = {O. V. Chefonov and A. V. Ovchinnikov and M. B. Agranat and V. E. Fortov and E. S. Efimenko and A. N. Stepanov and A. B. Save'lev},
journal= {arXiv preprint arXiv:1805.09611},
year = {2018}
}