We report the observation of inverse-magnetic-field-periodic, radiation-induced magnetoresistance oscillations in GaAs/AlGaAs heterostructures prepared in W. Wegscheider's group, compare their characteristics with similar oscillations in V. Umansky's material, and describe the lineshape variation vs. the radiation power, P, in the two systems. We find that the radiation-induced oscillatory ΔRxx, in both materials, can be described by ΔRxx=−Aexp(−λ/B)sin(2πF/B), where A is the amplitude, λ is the damping parameter, and F is the oscillation frequency. Both λ and F turn out to be insensitive to P. On the other hand, A grows nonlinearly with P.
@article{arxiv.1011.4233,
title = {Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations},
author = {R. G. Mani and C. Gerl and S. Schmult and W. Wegscheider and V. Umansky},
journal= {arXiv preprint arXiv:1011.4233},
year = {2010}
}