We show that non-exponential fidelity decays in randomized benchmarking experiments on quantum dot qubits are consistent with numerical simulations that incorporate low-frequency noise. By expanding standard randomized benchmarking analysis to this experimental regime, we find that such non-exponential decays are better modeled by multiple exponential decay rates, leading to an instantaneous control fidelity for isotopically-purified-silicon MOS quantum dot qubits which can be as high as 99.9% when low-frequency noise conditions and system calibrations are favorable. These advances in qubit characterization and validation methods underpin the considerable prospects for silicon as a qubit platform for fault-tolerant quantum computation.
@article{arxiv.1502.05119,
title = {Non-exponential Fidelity Decay in Randomized Benchmarking with Low-Frequency Noise},
author = {M. A. Fogarty and M. Veldhorst and R. Harper and C. H. Yang and S. D. Bartlett and S. T. Flammia and A. S. Dzurak},
journal= {arXiv preprint arXiv:1502.05119},
year = {2015}
}