Non-equilibrium thermodynamic description of junctions in semiconductor devices
Condensed Matter
2015-06-25 v2
Abstract
The methods of non-equilibrium thermodynamics of systems with an interface have been applied to the study of transport processes in semiconductor junctions. A complete phenomenological model for drift-diffusion processes in a junction has been derived, which includes, from first principles, both surface equations and boundary conditions, together with the usual drift-diffusion equations for the bulks. In this way a self-consistent characterisation of the whole system, bulks and interface, has been obtained in a common framework. The completeness of the model has been shown and a simple application to metal-semiconductor junctions developed.
Cite
@article{arxiv.cond-mat/9603066,
title = {Non-equilibrium thermodynamic description of junctions in semiconductor devices},
author = {Gabriel Gomila and Miguel Rubi},
journal= {arXiv preprint arXiv:cond-mat/9603066},
year = {2015}
}
Comments
12 pages, RevTex. Submitted to Phys. Rev. B minor LaTex errors corrected