Non-equilibrium electronic transport in a one-dimensional Mott insulator
Abstract
We calculate the non-equilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to non-interacting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state and the establishment of a steady-state electronic current through the system. Based on extensive time-dependent density matrix renormalization group simulations, we show that this steady-state current always has the same functional dependence on voltage, independent of the microscopic details of the model and relate the value of the threshold to the Lieb-Wu gap. We frame our results in terms of the Landau-Zener dielectric breakdown picture. Finally, we also discuss the real-time evolution of the current, and characterize the current-carrying state resulting from the breakdown of the Mott insulator by computing the double occupancy, the spin structure factor, and the entanglement entropy.
Cite
@article{arxiv.1008.0101,
title = {Non-equilibrium electronic transport in a one-dimensional Mott insulator},
author = {F. Heidrich-Meisner and I. Gonzalez and K. A. Al-Hassanieh and A. E. Feiguin and M. J. Rozenberg and E. Dagotto},
journal= {arXiv preprint arXiv:1008.0101},
year = {2010}
}
Comments
12 pages RevTex4, 12 eps figures, as published, minor revisions