English

NMR study of electronic state in CePt3Si

Superconductivity 2009-11-10 v1 Strongly Correlated Electrons

Abstract

In this article, we report the temperature dependence of spin-lattice relaxation rates at two Pt sites and one Si site in CePt3Si with a non-centrosymmetric structure center. 1/T1 for both Pt sites between 2 K and 300 K and 1/T1 of Si above 3 K might be explained by the contributions from the low-lying crystal-electric-field level and the quasiparticle due to the hybridization between the ground state and conduction electrons. Just below Tc no remarkable enhancement in 1/T1 was observed. The estimated value of superconducting gap is about 2Delta = 3kBTc.

Keywords

Cite

@article{arxiv.cond-mat/0409638,
  title  = {NMR study of electronic state in CePt3Si},
  author = {K. Ueda and K. Hamamoto and T. Kohara and G. Motoyama and Y. Oda},
  journal= {arXiv preprint arXiv:cond-mat/0409638},
  year   = {2009}
}

Comments

2 pages with 2 EPS figures. uses phb-proc4-auth.cls. Accepted for publication in Physica B

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