English

Native Defects in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$

Materials Science 2021-01-04 v1

Abstract

Using scanning tunneling microscopy and spectroscopy, we visualized the native defects in antiferromagnetic topological insulator MnBi2Te4\mathrm{MnBi_2Te_4}. Two native defects MnBi\mathrm{Mn_{Bi}} and BiTe\mathrm{Bi_{Te}} antisites can be well resolved in the topographic images. MnBi\mathrm{Mn_{Bi}} tend to suppress the density of states at conduction band edge. Spectroscopy imaging reveals a localized peak-like local density of state at 80\sim80~meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from BiMn\mathrm{Bi_{Mn}} antisites at Mn sites. The random distribution of MnBi\mathrm{Mn_{Bi}} and BiMn\mathrm{Bi_{Mn}} antisites results in spatial fluctuation of local density of states near the Fermi level in MnBi2Te4\mathrm{MnBi_2Te_4}.

Cite

@article{arxiv.2009.07437,
  title  = {Native Defects in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$},
  author = {Zengle Huang and Mao-Hua Du and Jiaqiang Yan and Weida Wu},
  journal= {arXiv preprint arXiv:2009.07437},
  year   = {2021}
}

Comments

6 pages, 4 figures

R2 v1 2026-06-23T18:34:30.061Z