Nanoscale Molecular Dynamics Simulaton of Shock Compression of Silicon
Abstract
We report results of molecular dynamics simulation of shock wave propagation in silicon in [100], [110], and [111] directions obtained using a classical environment-dependent interatomic potential (EDIP). Several regimes of materials response are classified as a function of shock wave intensity using the calculated shock Hugoniot. Shock wave structure in [100] and [111] directions exhibit usual evolution as a function of piston velocity. At piston velocities km/s the shock wave consists of a fast elastic precursor followed by a slower plastic front. At larger piston velocities the single overdriven plastic wave propagates through the crystal causing amorphitization of Si. However, the [110] shock wave exhibits an anomalous materials response at intermediate piston velocities around km/s which is characterized by the absence of plastic deformations.
Keywords
Cite
@article{arxiv.cond-mat/0511043,
title = {Nanoscale Molecular Dynamics Simulaton of Shock Compression of Silicon},
author = {I. I. Oleynik and S. V. Zybin and M. L. Elert and C. T. White},
journal= {arXiv preprint arXiv:cond-mat/0511043},
year = {2009}
}