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Multiple-Lithography-Compliant Verification for Standard Cell Library Development Flow

Other Computer Science 2018-05-29 v1

Abstract

Starting from 22-nm, a standard cell must be designed to be full lithography-compliant, which includes Design Rule Check, Design-for-Manufacturability and Double-Patterning compliant. It has become a great challenge for physical layout designers to provide a full lithography-compliant standard cell layout that is optimized for area, power, timing, signal integrity, and yield. This challenge is further exacerbated with abutted single- and multiple-height standard cells. At present, different foundries and library vendors have different approaches for full lithography-compliant library preparation and validation. To the best of our knowledge, there is no single tool integrates all types of lithography-compliant check in standard cell libraries validation flow. In this work, we will demonstrate multiple lithography-compliant verification for standard cell library development flow. Validation flow and detailed algorithm implementation will be explained to assist engineers to achieve full lithography-compliant standard cell libraries. An area-efficient standard cell placement methodology will also be discussed to validate the issues arises from standard cell abutment.

Keywords

Cite

@article{arxiv.1805.10745,
  title  = {Multiple-Lithography-Compliant Verification for Standard Cell Library Development Flow},
  author = {Yongfu Li and Wan Chia Ang and Chin Hui Lee and Kok Peng Chua and Yoong Seang Jonathan Ong and Chiu Wing Colin Hui},
  journal= {arXiv preprint arXiv:1805.10745},
  year   = {2018}
}

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