Multi-mode conversion via two-dimensional refractive-index perturbation on a silicon waveguide
Abstract
Mode-division multiplexing offers a promising solution to increase the data capacity for optical communications. Waveguide mode conversion is essential for on-chip mode-division multiplexing. Previously reported mode converters have been limited to the conversion from a fundamental mode to one particular high-order mode. It is challenging to simultaneously satisfy the phase matching conditions during multiple mode conversion processes. Here, we propose a scalable design method that overcomes this limitation and realizes the simultaneous conversion of multiple modes via an all-dielectric two-dimensional metastructure on a silicon waveguide by shallow etching with hexagonal patterns. As an example, we experimentally demonstrate a multi-mode converter that simultaneously converts the TEi modes to the TEi+3 (i = 0, 1, 2) modes. The length of the multi-mode converter is 16.2 micron. The TE0-TE3, TE1-TE4, and TE2-TE5 mode conversions exhibit low insertion losses (0.4 to 1.0 dB) and reasonable crosstalk values (-14.1 to -16.5 dB) at 1538 nm.
Keywords
Cite
@article{arxiv.1911.10786,
title = {Multi-mode conversion via two-dimensional refractive-index perturbation on a silicon waveguide},
author = {Chunhui Yao and Zhen Wang and Hongwei Wang and Yu He and Yong Zhang and Yikai Su},
journal= {arXiv preprint arXiv:1911.10786},
year = {2019}
}
Comments
27 pages, 7 figures