Monte Carlo study of Si(111) homoepitaxy
Statistical Mechanics
2009-10-31 v1 Materials Science
Abstract
An attempt is made to simulate the homoepitaxial growth of a Si(111) surface by the kinetic Monte Carlo method in which the standard Solid-on-Solid model and the planar model of the (7x7) surface reconstruction are used in combination. By taking account of surface reconstructions as well as atomic deposition and migrations, it is shown that the effect of a coorparative stacking transformation is necessary for a layer growth.
Cite
@article{arxiv.cond-mat/9804004,
title = {Monte Carlo study of Si(111) homoepitaxy},
author = {Makoto Itoh},
journal= {arXiv preprint arXiv:cond-mat/9804004},
year = {2009}
}
Comments
4 pages, 5 figures. For Fig.1 of this article, please see Fig.2 of Phys.Rev. B56, 3583 (1997). To appear in Phys.Rev.B. (June 1998)