Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain-length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is minority, rather than majority carrier-dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission and, as such is rather insensitive to interface properties. The (m)ethyl results show that binding organic molecules directly to semiconductors provides semiconductor/metal interface control options, not accessible otherwise.
@article{arxiv.0903.3724,
title = {Molecular electronics at Metal / Semiconductor Junctions Si inversion by Sub-nm Molecular Films},
author = {Omer Yaffe and Luc Scheres and Sreenivasa Reddy Puniredd and Nir Stein and Ariel Biller and Rotem Har Lavan and Hagay Shpaisman and Han Zuilhof and Hossam Haick and David Cahen and Ayelet Vilan},
journal= {arXiv preprint arXiv:0903.3724},
year = {2015}
}