Modelling (001) surfaces of II-VI semiconductors
Materials Science
2009-11-07 v1 Statistical Mechanics
Abstract
First, we present a two-dimensional lattice gas model with anisotropic interactions which explains the experimentally observed transition from a dominant c(2x2) ordering of the CdTe(001) surface to a local (2x1) arrangement of the Cd atoms as an equilibrium phase transition. Its analysis by means of transfer-matrix and Monte Carlo techniques shows that the small energy difference of the competing reconstructions determines to a large extent the nature of the different phases. Then, this lattice gas is extended to a model of a three-dimensional crystal which qualitatively reproduces many of the characteristic features of CdTe which have been observed during sublimation and atomic layer epitaxy.
Cite
@article{arxiv.cond-mat/0107630,
title = {Modelling (001) surfaces of II-VI semiconductors},
author = {M. Ahr and M. Biehl and T. Volkmann},
journal= {arXiv preprint arXiv:cond-mat/0107630},
year = {2009}
}
Comments
5 pages, 3 figures