Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics
Materials Science
2009-10-31 v1 Statistical Mechanics
Abstract
We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze the kinetics of the transformation and the grain size distribution of the product material, finding a good overall agreement between our model and available experimental data. The information so obtained could help to relate the mentioned experimental deviations due to preexisting anisotropy along some regions, to certain degree of crystallinity of the amorphous phases during deposition, or more generally to impurities or roughness of the substrate.
Cite
@article{arxiv.cond-mat/9908463,
title = {Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics},
author = {Mario Castro and Francisco Dominguez-Adame and Angel Sanchez and Tomas Rodriguez},
journal= {arXiv preprint arXiv:cond-mat/9908463},
year = {2009}
}
Comments
REVTeX, 3 pages, 3 figures, to appear in Applied Physics Letters