Resonant microwave-assisted and DC transport are investigated in degenerately doped silicon single electron transistors. A model based on hopping via localized impurity states is developed and first used to explain both the DC temperature dependence and the AC response. In particular, the non-monotonic power dependence of the resonant current under irradiation is proved to be consistent with spatial Rabi oscillations between these localized states.
@article{arxiv.1003.2340,
title = {Microwave-assisted transport via localized states in degenerately doped Si single electron transistors},
author = {A. Rossi and D. G. Hasko},
journal= {arXiv preprint arXiv:1003.2340},
year = {2010}
}