We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the Γ point of Brillouin zone. Analysis of experimental data within analytical Dirac-like Hamiltonian allows us not only determing velocity vF=1.8⋅105 m/s of massless Dirac fermions but also demonstrating significant non-linear dispersion at high energies.
@article{arxiv.1812.02468,
title = {Massless Dirac fermions in III-V semiconductor quantum wells},
author = {S. S. Krishtopenko and W. Desrat and K. E. Spirin and C. Consejo and S. Ruffenach and F. Gonzalez-Posada and B. Jouault and W. Knap and K. V. Maremyanin and V. I. Gavrilenko and G. Boissier and J. Torres and M. Zaknoune and E. Tournié and F. Teppe},
journal= {arXiv preprint arXiv:1812.02468},
year = {2019}
}
Comments
Main text and Supplemental Materials, 14 pages, 9 figures