English

Manipulating Giant Rashba Valley Splitting and Quantum Hall States in Few-Layer Black Arsenic by Electrostatic Gating

Mesoscale and Nanoscale Physics 2021-05-10 v1 Materials Science

Abstract

Exciting phenomena may emerge in non-centrosymmetric two-dimensional (2D) electronic systems when spin-orbit coupling (SOC) interplays dynamically with Coulomb interactions, band topology, and external modulating forces, etc. Here, we report illuminating synergetic effects between SOC and Stark in centrosymmetric few-layer black arsenic (BAs), manifested as giant Rashba valley splitting and exotic quantum Hall states (QHS) reversibly controlled by electrostatic gating. The unusual finding is rooted in the puckering square lattice of BAs, in which heavy 4p4p orbitals form highly asymmetric Γ\Gamma valley with the pzp_{z} symmetry and DD valleys of the pxp_{x} origin, located at the Brillouin zone (BZ) center and near the time reversal invariant momenta of XX, respectively. When the structure inversion symmetry is broken by perpendicular electric field, giant Rashba SOC is activated for the pxp_{x} bands to produce strong spin-polarized D+D^{+} and DD^{-} valleys related by time-reversal symmetry, coexisting with weak Γ\Gamma Rashba bands constrained by the pzp_{z} symmetry. Intriguingly, strong Stark effect shows the same pxp_{x}-orbital selectiveness for DD, collectively shifting the valence band maximum of D±D^{\pm} valleys to exceed the Γ\Gamma pockets. Such an orchestrating effect between SOC and Stark allows us to realize gate-tunable spin valley manipulations for 2D hole gas, as revealed by unconventional magnetic field triggered even-to-odd transitions in QHS. For electron doping, the quantization of the Γ\Gamma Rashba bands is characterized by peculiar density-dependent transitions in band topology from two parabolic valleys to a unique inner-outer helical structure when charge carrier concentrations increase.

Keywords

Cite

@article{arxiv.2010.13182,
  title  = {Manipulating Giant Rashba Valley Splitting and Quantum Hall States in Few-Layer Black Arsenic by Electrostatic Gating},
  author = {Feng Shen and Chenqiang Hua and Xikang Sun and Jie Hu and Qian Tao and Hengzhe Lu and Yunhao Lu and Mianzeng Zhong and Kenji Watanabe and Takashi Taniguchi and Qinling Xia and Zhu-An Xu and Yi Zheng},
  journal= {arXiv preprint arXiv:2010.13182},
  year   = {2021}
}

Comments

9 pages, 4 figures