Magnetoresistance (MR) oscillations serve as a hallmark of intrinsic quantum behavior, traditionally observed only in conducting systems. Here we report the discovery of MR oscillations in an insulating system, the vertical junctions of CrPS4 which is a two dimensional (2D) A-type antiferromagnetic semiconductor. Systematic investigations of MR peaks under varying conditions, including electrode materials, magnetic field direction, temperature, voltage bias and layer number, elucidate a correlation between MR oscillations and spin-canted states in CrPS4. Experimental data and analysis point out the important role of the in-gap electronic states in generating MR oscillations, and we proposed that spin selected interlayer hopping of localized defect states may be responsible for it. Our findings not only illuminate the unusual electronic transport in CrPS4 but also underscore the potential of van der Waals magnets for exploring interesting phenomena.
@article{arxiv.2410.18258,
title = {Magnetoresistance oscillations in vertical junctions of 2D antiferromagnetic semiconductor CrPS$_4$},
author = {Pengyuan Shi and Xiaoyu Wang and Lihao Zhang and Wenqin Song and Kunlin Yang and Shuxi Wang and Ruisheng Zhang and Liangliang Zhang and Takashi Taniguchi and Kenji Watanabe and Sen Yang and Lei Zhang and Lei Wang and Wu Shi and Jie Pan and Zhe Wang},
journal= {arXiv preprint arXiv:2410.18258},
year = {2024}
}