English

Magnetoresistance of itinerant electrons interacting with local spins

Strongly Correlated Electrons 2009-11-10 v1 Materials Science

Abstract

Transport properties of itinerant electrons interacting with local spins are analyzed as function of the bandwidth, WW, the exchange interaction, JJ, and the band filling, nn, near the band edge. Numerical results have been obtained within the dynamical mean-field approximation and interpreted with the help of analytical treatments. If spatial correlations of the magnetic fluctuations can be neglected, and defining ρ(m)\rho (m) as the magnetization dependent resistivity, we find that δρ/ρ(0)n4/3\delta \rho / \rho (0) \sim n^{-4/3} for J/W,n1J / W, n \ll 1 (weak coupling, low density limit), δρ/ρ(0)constant\delta \rho / \rho (0) \sim constant, for J/W1,n1J / W \gg 1, n \ll 1 (double exchange, low density limit), where δρ=ρ/m2m20\delta \rho = \partial \rho / \partial m^2 |_{m^2 \to 0}. Possible limitations from ignoring both localization effects and critical fluctuations are also considered.

Keywords

Cite

@article{arxiv.cond-mat/0404644,
  title  = {Magnetoresistance of itinerant electrons interacting with local spins},
  author = {G. Gomez-Santos and S. Fratini and F. Guinea},
  journal= {arXiv preprint arXiv:cond-mat/0404644},
  year   = {2009}
}

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7 pages