We predict that antiferromagnetic bilayers formed from van der Waals (vdW) materials, like bilayer CrI3, have a strong magnetoelectric response that can be detected by measuring the gate voltage dependence of Faraday or Kerr rotation signals, total magnetization, or anomalous Hall conductivity. Strong effects are possible in single-gate geometries, and in dual-gate geometries that allow internal electric fields and total carrier densities to be varied independently. We comment on the reliability of density-functional-theory estimates of interlayer magnetic interactions in van der Waals bilayers, and on the sensitivity of magnetic interactions to pressure that alters the spatial separation between layers.
@article{arxiv.1902.06418,
title = {Magnetoelectric Response of Antiferromagnetic Van der Waals Bilayers},
author = {Chao Lei and Bheema Lingam Chittari and Kentaro Nomura and Nepal Banerjee and Jeil Jung and Allan H. MacDonald},
journal= {arXiv preprint arXiv:1902.06418},
year = {2021}
}
Comments
This is the version for publish, the SI can be found in previous version