Magnetic-Field Dependence of the YbRh2Si2 Fermi Surface

P. M. C. Rourke; A. McCollam; G. Lapertot; G. Knebel; J. Flouquet; S. R. Julian

doi:10.1103/PhysRevLett.101.237205

Magnetic-Field Dependence of the YbRh2Si2 Fermi Surface

Strongly Correlated Electrons 2009-02-03 v2

Authors: P. M. C. Rourke , A. McCollam , G. Lapertot , G. Knebel , J. Flouquet , S. R. Julian

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Abstract

Magnetic-field-induced changes of the Fermi surface play a central role in theories of the exotic quantum criticality of YbRh2Si2. We have carried out de Haas-van Alphen measurements in the magnetic-field range 8 T <= H <= 16 T, and directly observe field dependence of the extremal Fermi surface areas. Our data support the theory that a low-field "large" Fermi surface, including the Yb 4f quasihole, is increasingly spin split until a majority-spin branch undergoes a Lifshitz transition and disappears at H0 ~ 10 T, without requiring 4f localization at H0.

Keywords

YbRh2Si2 Fermi surface de Haas-van Alphen effect quantum criticality Lifshitz transition magnetic field dependence

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@article{arxiv.0807.3970,
  title  = {Magnetic-Field Dependence of the YbRh2Si2 Fermi Surface},
  author = {P. M. C. Rourke and A. McCollam and G. Lapertot and G. Knebel and J. Flouquet and S. R. Julian},
  journal= {arXiv preprint arXiv:0807.3970},
  year   = {2009}
}

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4 pages, 5 figures, 1 table

Magnetic-Field Dependence of the YbRh2Si2 Fermi Surface

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